Parameters |
Mfr |
International Rectifier |
Series |
HEXFET® |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
25V |
Current - Continuous Drain (Id) @ 25°C |
86A (Tc), 303A (Tc) |
Rds On (Max) @ Id, Vgs |
2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 35µA, 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 4.5V, 53nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1735pF @ 13V, 4765pF @ 13V |
Power - Max |
156W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
32-PowerVFQFN |
Supplier Device Package |
32-PQFN (6x6) |
Base Product Number |
IRFHE4250 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
0000.00.0000 |
Standard Package |
3,000 |
Mosfet Array 25V 86A (Tc), 303A (Tc) 156W (Tc) Surface Mount 32-PQFN (6x6)