Microchip Technology 2N5010S
POWER BJT
- Manufacturer: Microchip Technology
- Manufacturer's number: Microchip Technology 2N5010S
- Package: Bulk
- Datasheet: -
- Stock: 1632
- SKU: 2N5010S
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Microchip Technology |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 5mA, 25mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
| Power - Max | 1 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 150-2N5010S |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN 500 V 200 mA 1 W Through Hole TO-39 (TO-205AD)
