Microchip Technology APT35GP120B2D2G

IGBT PT COMBI 1200V 35A TO-247

Manufacturer: Microchip Technology
Manufacturer's number: Microchip Technology APT35GP120B2D2G
Package: Tube
Datasheet: -
Stock: 2652
SKU: APT35GP120B2D2G
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Details

Parameters
Mfr	Microchip Technology
Series	POWER MOS 7®
Package	Tube
Product Status	Active
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	96 A
Current - Collector Pulsed (Icm)	140 A
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 35A
Power - Max	540 W
Switching Energy	1mJ (on), 1.185mJ (off)
Input Type	Standard
Gate Charge	150 nC
Td (on/off) @ 25°C	14ns/99ns
Test Condition	800V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)	85 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	T-MAX™ [B2]
Base Product Number	APT35GP120
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	150-APT35GP120B2D2G
Standard Package	1

IGBT PT 1200 V 96 A 540 W Through Hole T-MAX™ [B2]