Parameters |
Mfr |
MoSys, Inc. |
Series |
- |
Package |
Tray |
Product Status |
Active |
Memory Type |
Volatile |
Memory Format |
SRAM |
Technology |
1T-SRAM |
Memory Size |
576Mbit |
Memory Organization |
8M x 72 |
Memory Interface |
Parallel |
Clock Frequency |
1.25 GHz |
Write Cycle Time - Word, Page |
- |
Access Time |
2.6 ns |
Voltage - Supply |
0.95V |
Operating Temperature |
0°C ~ 85°C (TC) |
Mounting Type |
Surface Mount |
Package / Case |
324-BGA |
Supplier Device Package |
324-PBGA (19x19) |
Base Product Number |
MSR820 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
4 (72 Hours) |
ECCN |
3A991B2B |
HTSUS |
8542.32.0036 |
Other Names |
2331-MSR820AJC288-12 |
Standard Package |
84 |
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)