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NEC Corporation AN1L3N
SMALL SIGNAL BIPOLAR TRANSISTOR
- Manufacturer: NEC Corporation
- Manufacturer's number: NEC Corporation AN1L3N
- Package: Bulk
- Datasheet: PDF
- Stock: 56
- SKU: AN1L3N
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Through Hole TO-92
| Parameters | |
|---|---|
| Mfr | NEC Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Power - Max | 250 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 1 |
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