| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
10 A |
| Voltage - Collector Emitter Breakdown (Max) |
60 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 10mA, 5A |
| Current - Collector Cutoff (Max) |
100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 5A, 2V |
| Power - Max |
2.5 W |
| Frequency - Transition |
20MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P |
| RoHS Status |
ROHS3 Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2368-NTE214 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 20MHz 2.5 W Through Hole TO-3P