NXP Semiconductors BAS116GWJ

DIODE GEN PURP 75V 215MA SOD123

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors BAS116GWJ
Package: Bulk
Datasheet: PDF
Stock: 5096
SKU: BAS116GWJ
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Details

Parameters
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.10.0070
Other Names	2156-BAS116GWJ-954
Standard Package	1
Mfr	NXP Semiconductors
Series	Automotive, AEC-Q101
Package	Bulk
Product Status	Active
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	75 V
Current - Average Rectified (Io)	215mA
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	3 µs
Current - Reverse Leakage @ Vr	5 nA @ 75 V
Capacitance @ Vr, F	2pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SOD-123
Supplier Device Package	SOD-123
Operating Temperature - Junction	150°C (Max)
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Diode 75 V 215mA Surface Mount SOD-123