Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
590mA (Ta) |
Rds On (Max) @ Id, Vgs |
670mOhm @ 590mA, 4.5V |
Vgs(th) (Max) @ Id |
0.95V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
1.05nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
30.3pF @ 15V |
Power - Max |
285mW (Ta), 4.03W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-XFDFN Exposed Pad |
Supplier Device Package |
DFN1010B-6 |
Other Names |
2156-PMDXB550UNE/S500Z |
Standard Package |
1 |
Mosfet Array 30V 590mA (Ta) 285mW (Ta), 4.03W (Tc) Surface Mount DFN1010B-6