Parameters | |
---|---|
Mfr | NXP USA Inc. |
Series | TrenchMOS™ |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 710mA |
Rds On (Max) @ Id, Vgs | 480mOhm @ 200mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V |
Power - Max | 410mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |
Base Product Number | PMGD4 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |
Standard Package | 3,000 |
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