PN Junction Semiconductor P3D06006I2
DIODE SIL CARB 650V 18A TO220I-2
- Manufacturer: PN Junction Semiconductor
- Manufacturer's number: PN Junction Semiconductor P3D06006I2
- Package: Tube
- Datasheet: PDF
- Stock: 3917
- SKU: P3D06006I2
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | PN Junction Semiconductor |
| Series | P3D |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 18A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
| Package / Case | TO-220I-2 |
| Supplier Device Package | TO-220I-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Affected |
| Other Names | 4237-P3D06006I2 |
| Standard Package | 1 |
Diode 650 V 18A TO-220I-2
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