Parameters | |
---|---|
Mfr | PN Junction Semiconductor |
Series | P3D |
Package | Tube |
Product Status | Active |
Technology | SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 26A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 36 µA @ 650 V |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
RoHS Status | ROHS3 Compliant |
REACH Status | REACH Affected |
Other Names | 4237-P3D06008T2 |
Standard Package | 1 |