
| Parameters | |
|---|---|
| Mfr | PN Junction Semiconductor |
| Series | P3D |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 45A |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Capacitance @ Vr, F | 904pF @ 0V, 1MHz |
| Mounting Type | - |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Affected |
| Other Names | 4237-P3D06020T2 |
| Standard Package | 1 |