PN Junction Semiconductor P6D12002E2
DIODE SIL CARB 1.2KV 8A TO252-2
- Manufacturer: PN Junction Semiconductor
- Manufacturer's number: PN Junction Semiconductor P6D12002E2
- Package: Tape & Reel (TR)
- Datasheet: PDF
- Stock: 1687
- SKU: P6D12002E2
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Standard Package | 1 |
| Mfr | PN Junction Semiconductor |
| Series | P6D |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 8A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Package / Case | TO-252-2 |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| RoHS Status | ROHS3 Compliant |
| REACH Status | REACH Affected |
| Other Names | 4237-P6D12002E2TR |
Diode 1200 V 8A TO-252-2
More Products
-
Diodes Incorporated 1N4001-T
-
Diodes Incorporated 1N4002-T
-
Diodes Incorporated 1N4003-T
-
Diodes Incorporated 1N4004-T
-
Diodes Incorporated 1N4005-T
-
Diodes Incorporated 1N4006-T
-
Diodes Incorporated 1N4007-T
-
Diodes Incorporated 1N4148-T
-
Vishay General Semiconductor - Diodes Division VS-70HFR40
-
Diodes Incorporated 1N5400-T
-
Diodes Incorporated S1BB-13
-
Vishay General Semiconductor - Diodes Division VS-85HF100
-
Diodes Incorporated 1N5401-T
-
Diodes Incorporated 1N5402-T
-
Diodes Incorporated 1N5404-T