Parameters |
Mfr |
PN Junction Semiconductor |
Series |
- |
Package |
Tray |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
350A |
Rds On (Max) @ Id, Vgs |
7.3mOhm @ 300A, 20V |
Vgs(th) (Max) @ Id |
5V @ 100mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
29.5pF @ 1000V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
PAA12400 |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Affected |
Other Names |
4237-PAA12400BM3 |
Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 350A Chassis Mount Module