Parameters |
Gate Charge (Qg) (Max) @ Vgs |
6.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
251pF @ 25V |
Power - Max |
2.3W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerVDFN |
Supplier Device Package |
8-PQFN (3.3x3.3), Power33 |
Base Product Number |
IRFHM792 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
4,000 |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
2.3A |
Rds On (Max) @ Id, Vgs |
195mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id |
4V @ 10µA |
Mosfet Array 100V 2.3A 2.3W Surface Mount 8-PQFN (3.3x3.3), Power33