Renesas 2SB601-AZ
2SB601 - PNP SILICON EPITAXIAL T
- Manufacturer: Renesas
- Manufacturer's number: Renesas 2SB601-AZ
- Package: Bulk
- Datasheet: -
- Stock: 4
- SKU: 2SB601-AZ
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Renesas |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 2V |
| Power - Max | 1.5 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| RoHS Status | RoHS non-compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 2156-2SB601-AZ |
| Standard Package | 1 |
Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 1.5 W Through Hole TO-220AB