Parameters |
Other Names |
846-BSM300D12P4G101 |
Standard Package |
4 |
Mfr |
Rohm Semiconductor |
Series |
- |
Package |
Box |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
1200V |
Current - Continuous Drain (Id) @ 25°C |
291A (Tc) |
Rds On (Max) @ Id, Vgs |
- |
Vgs(th) (Max) @ Id |
4.8V @ 145.6mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
30000pF @ 10V |
Power - Max |
925W (Tc) |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
BSM300 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mosfet Array 1200V 291A (Tc) 925W (Tc) Chassis Mount Module