| Parameters |
| Mfr |
Rohm Semiconductor |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel (Half Bridge) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C |
600A (Tc) |
| Rds On (Max) @ Id, Vgs |
- |
| Vgs(th) (Max) @ Id |
5.6V @ 182mA |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
31000pF @ 10V |
| Power - Max |
2450W (Tc) |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
Module |
| Base Product Number |
BSM600 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
846-BSM600D12P3G001 |
| Standard Package |
4 |
Mosfet Array 1200V (1.2kV) 600A (Tc) 2450W (Tc) Chassis Mount Module