Rohm Semiconductor BSM600D12P4G103
1200V, 567A, HALF BRIDGE, FULL S
- Manufacturer: Rohm Semiconductor
- Manufacturer's number: Rohm Semiconductor BSM600D12P4G103
- Package: Box
- Datasheet: PDF
- Stock: 8266
- SKU: BSM600D12P4G103
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Box |
| Product Status | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 567A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 4.8V @ 291.2mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 59000pF @ 10V |
| Power - Max | 1.78kW (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Base Product Number | BSM600 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Other Names | 846-BSM600D12P4G103 |
| Standard Package | 4 |
Mosfet Array 1200V 567A (Tc) 1.78kW (Tc) Chassis Mount Module
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