Parameters |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
30 µA @ 650 V |
Capacitance @ Vr, F |
556pF @ 0V, 1MHz |
Mounting Type |
Through Hole |
Package / Case |
TO-220-2 |
Supplier Device Package |
TO-220-2L |
Operating Temperature - Junction |
-55°C ~ 175°C |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
ECCN |
EAR99 |
HTSUS |
8541.10.0000 |
Other Names |
5023-SDS065J010C3 |
Standard Package |
1,000 |
Mfr |
Sanan Semiconductor |
Series |
- |
Package |
Tube |
Product Status |
Active |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
650 V |
Current - Average Rectified (Io) |
30A |
Voltage - Forward (Vf) (Max) @ If |
1.5 V @ 10 A |
Speed |
No Recovery Time > 500mA (Io) |
Diode 650 V 30A Through Hole TO-220-2L