| Parameters |
| Mfr |
Sanan Semiconductor |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
650 V |
| Current - Average Rectified (Io) |
30A |
| Voltage - Forward (Vf) (Max) @ If |
1.5 V @ 10 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
30 µA @ 650 V |
| Capacitance @ Vr, F |
556pF @ 0V, 1MHz |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package |
TO-263-2L |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0000 |
| Other Names |
5023-SDS065J010E3 |
| Standard Package |
800 |
Diode 650 V 30A Surface Mount TO-263-2L