| Parameters |
| Mfr |
Sanan Semiconductor |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| Diode Configuration |
1 Pair Common Cathode |
| Technology |
SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) |
650 V |
| Current - Average Rectified (Io) (per Diode) |
44A |
| Voltage - Forward (Vf) (Max) @ If |
1.5 V @ 15 A |
| Speed |
No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) |
0 ns |
| Current - Reverse Leakage @ Vr |
48 µA @ 650 V |
| Operating Temperature - Junction |
-55°C ~ 175°C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3L |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN |
EAR99 |
| HTSUS |
8541.10.0000 |
| Other Names |
5023-SDS065J030G3 |
| Standard Package |
300 |
Diode Array 1 Pair Common Cathode 650 V 44A Through Hole TO-247-3