Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
15V |
Frequency - Transition |
- |
Noise Figure (dB Typ @ f) |
6dB @ 60MHz |
Gain |
15dB |
Power - Max |
350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 8mA, 10V |
Current - Collector (Ic) (Max) |
50mA |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Base Product Number |
2N5770 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2N5770-NDR |
Standard Package |
2,000 |
RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3