Parameters |
Mfr |
SemiQ |
Series |
- |
Package |
Tube |
Product Status |
Active |
Diode Configuration |
2 Independent |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1200 V |
Current - Average Rectified (Io) (per Diode) |
198A (DC) |
Voltage - Forward (Vf) (Max) @ If |
1.7 V @ 100 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
200 µA @ 1200 V |
Operating Temperature - Junction |
-55°C ~ 175°C |
Mounting Type |
Chassis Mount |
Package / Case |
SOT-227-4, miniBLOC |
Supplier Device Package |
SOT-227 |
Base Product Number |
GHXS100 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Affected |
ECCN |
EAR99 |
HTSUS |
8541.10.0080 |
Other Names |
1560-GHXS100B120S-D3 |
Standard Package |
10 |
Diode Array 2 Independent 1200 V 198A (DC) Chassis Mount SOT-227-4, miniBLOC