Infineon Technologies IRF7379PBF

IRF7379PBF

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRF7379PBF
Package: Tube
Datasheet: PDF
Stock: 7416
SKU: IRF7379PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Obsolete
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.8A, 4.3A
Rds On (Max) @ Id, Vgs	45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 25V
Power - Max	2.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Base Product Number	IRF737
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001555260
Standard Package	95

Mosfet Array 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO