Parameters |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tube |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
55V |
Current - Continuous Drain (Id) @ 25°C |
4.7A, 3.4A |
Rds On (Max) @ Id, Vgs |
50mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
740pF @ 25V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Base Product Number |
IRF734 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
SP001571976 |
Standard Package |
3,800 |
Mosfet Array 55V 4.7A, 3.4A 2W Surface Mount 8-SO