SGL160N60UFDTU

FAIRCHILD SEMICONDUCTOR SGL160N60UFDTU.IGBT Single Transistor, 160 A, 2.6 V, 250 W, 600 V, TO-264, 3 Pins

Manufacturer: ON Semiconductor
Manufacturer's number: SGL160N60UFDTU
Package: TO-264-3, TO-264AA
Datasheet: -
Stock: 9216
SKU: 1807-SGL160N60UFDTU
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Parameters
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	300V, 80A, 3.9 Ω, 15V
Turn Off Delay Time	90 ns
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	250W
Current Rating	80A
Element Configuration	Single
Power Dissipation	250W
Input Type	Standard
Turn On Delay Time	40 ns
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	160A
Reverse Recovery Time	95 ns
Turn On Time	150 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 80A
Turn Off Time-Nom (toff)	262 ns
Gate Charge	345nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	40ns/90ns
Switching Energy	2.5mJ (on), 1.76mJ (off)
Height	26mm
Length	20mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 10 hours ago)
Mount	Through Hole
Mounting Type	Through Hole

Description

The SGL160N60UFDTU is low conduction and switching losses 600V short circuit rated ultrafast IGBT. This UFD series is intended for high-speed switching applications like motor control and general inverters. This item is intended for general use and can be used in a variety of ways. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.