| Parameters |
| Mfr |
Microchip Technology |
| Series |
POWER MOS 7® |
| Package |
Tube |
| Product Status |
Active |
| IGBT Type |
PT |
| Voltage - Collector Emitter Breakdown (Max) |
900 V |
| Current - Collector (Ic) (Max) |
72 A |
| Current - Collector Pulsed (Icm) |
110 A |
| Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 25A |
| Power - Max |
417 W |
| Switching Energy |
370µJ (off) |
| Input Type |
Standard |
| Gate Charge |
110 nC |
| Td (on/off) @ 25°C |
13ns/55ns |
| Test Condition |
600V, 40A, 4.3Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 [B] |
| Base Product Number |
APT25GP90 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
IGBT PT 900 V 72 A 417 W Through Hole TO-247 [B]