| Parameters |
| Mfr |
Microchip Technology |
| Series |
POWER MOS 7® |
| Package |
Tube |
| Product Status |
Active |
| IGBT Type |
PT |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
198 A |
| Current - Collector Pulsed (Icm) |
250 A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 65A |
| Power - Max |
833 W |
| Switching Energy |
605µJ (on), 895µJ (off) |
| Input Type |
Standard |
| Gate Charge |
210 nC |
| Td (on/off) @ 25°C |
30ns/90ns |
| Test Condition |
400V, 65A, 5Ohm, 15V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Base Product Number |
APT65GP60 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
IGBT PT 600 V 198 A 833 W Through Hole