| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate, 1.5V Drive |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
4A |
| Rds On (Max) @ Id, Vgs |
33mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
3.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
410pF @ 10V |
| Power - Max |
2W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-WDFN Exposed Pad |
| Supplier Device Package |
6-UDFNB (2x2) |
| Base Product Number |
SSM6N61 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
3,000 |
Mosfet Array 20V 4A 2W Surface Mount 6-UDFNB (2x2)