| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
15 A |
| Voltage - Collector Emitter Breakdown (Max) |
230 V |
| Vce Saturation (Max) @ Ib, Ic |
3V @ 800mA, 8A |
| Current - Collector Cutoff (Max) |
5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
55 @ 1A, 5V |
| Power - Max |
150 W |
| Frequency - Transition |
30MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PL |
| Supplier Device Package |
TO-3P(L) |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
25 |
Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)