Toshiba Semiconductor and Storage GT20J341,S4X(S

DISCRETE IGBT TRANSISTOR TO-220S

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT20J341,S4X(S
Package: Tube
Datasheet: PDF
Stock: 6909
SKU: GT20J341,S4X(S
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Power - Max	45 W
Switching Energy	500µJ (on), 400µJ (off)
Input Type	Standard
Td (on/off) @ 25°C	60ns/240ns
Test Condition	300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr)	90 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220SIS
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

IGBT 600 V 20 A 45 W Through Hole TO-220SIS