Toshiba Semiconductor and Storage GT20N135SRA,S1E

D-IGBT TO-247 VCES=1350V IC=40A

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT20N135SRA,S1E
Package: Tube
Datasheet: PDF
Stock: 3
SKU: GT20N135SRA,S1E
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Unit Price: $3.2800

Ext Price: $3.2800

Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	312 W
Switching Energy	-, 700µJ (off)
Input Type	Standard
Gate Charge	185 nC
Td (on/off) @ 25°C	-
Test Condition	300V, 40A, 39Ohm, 15V
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

IGBT 1350 V 40 A 312 W Through Hole TO-247