Toshiba Semiconductor and Storage GT30J65MRB,S1E - Toshiba Semiconductor and Storage IGBTs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage GT30J65MRB,S1E

650V SILICON N-CHANNEL IGBT, TO-

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage GT30J65MRB,S1E
  • Package: Tube
  • Datasheet: -
  • Stock: 74
  • SKU: GT30J65MRB,S1E
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $2.5800

Ext Price: $2.5800

Details

Tags

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Power - Max 200 W
Switching Energy 1.4mJ (on), 220µJ (off)
Input Type Standard
Gate Charge 70 nC
Td (on/off) @ 25°C 75ns/400ns
Test Condition 400V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr) 200 ns
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Base Product Number GT30J65
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
IGBT 650 V 60 A 200 W Through Hole TO-3P(N)