Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tube |
Product Status |
Active |
IGBT Type |
- |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Current - Collector (Ic) (Max) |
60 A |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Power - Max |
200 W |
Switching Energy |
1.4mJ (on), 220µJ (off) |
Input Type |
Standard |
Gate Charge |
70 nC |
Td (on/off) @ 25°C |
75ns/400ns |
Test Condition |
400V, 15A, 56Ohm, 15V |
Reverse Recovery Time (trr) |
200 ns |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P(N) |
Base Product Number |
GT30J65 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
25 |
IGBT 650 V 60 A 200 W Through Hole TO-3P(N)