Toshiba Semiconductor and Storage GT30J65MRB,S1E

650V SILICON N-CHANNEL IGBT, TO-

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT30J65MRB,S1E
Package: Tube
Datasheet: -
Stock: 74
SKU: GT30J65MRB,S1E
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Unit Price: $2.5800

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	60 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Power - Max	200 W
Switching Energy	1.4mJ (on), 220µJ (off)
Input Type	Standard
Gate Charge	70 nC
Td (on/off) @ 25°C	75ns/400ns
Test Condition	400V, 15A, 56Ohm, 15V
Reverse Recovery Time (trr)	200 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Base Product Number	GT30J65
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25

IGBT 650 V 60 A 200 W Through Hole TO-3P(N)