Toshiba Semiconductor and Storage GT30N135SRA,S1E
D-IGBT TO-247 VCES=1350V IC=30A
- Manufacturer: Toshiba Semiconductor and Storage
- Manufacturer's number: Toshiba Semiconductor and Storage GT30N135SRA,S1E
- Package: Tube
- Datasheet: PDF
- Stock: 4361
- SKU: GT30N135SRA,S1E
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
| Power - Max | 348 W |
| Switching Energy | -, 1.3mJ (off) |
| Input Type | Standard |
| Gate Charge | 270 nC |
| Td (on/off) @ 25°C | - |
| Test Condition | 300V, 60A, 39Ohm, 15V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 30 |
IGBT 1350 V 60 A 348 W Through Hole TO-247
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