Toshiba Semiconductor and Storage GT40RR21(STA1,E

PB-F IGBT / TRANSISTOR TO-3PN IC

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT40RR21(STA1,E
Package: Tube
Datasheet: PDF
Stock: 6599
SKU: GT40RR21(STA1,E
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 40A
Power - Max	230 W
Switching Energy	-, 540µJ (off)
Input Type	Standard
Td (on/off) @ 25°C	-
Test Condition	280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr)	600 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Base Product Number	GT40RR21
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25

IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)