Toshiba Semiconductor and Storage GT40WR21,Q

DISCRETE IGBT TRANSISTOR TO-3PN(

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT40WR21,Q
Package: Tray
Datasheet: PDF
Stock: 9581
SKU: GT40WR21,Q
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Unit Price: $11.0200

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Details

Parameters
Series	-
Package	Tray
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1350 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	5.9V @ 15V, 40A
Power - Max	375 W
Switching Energy	-
Input Type	Standard
Td (on/off) @ 25°C	-
Test Condition	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	100
Mfr	Toshiba Semiconductor and Storage

IGBT 1350 V 40 A 375 W Through Hole TO-3P(N)