Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)

PB-F IGBT / TRANSISTOR TO-3PN(OS

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT50JR22(STA1,E,S)
Package: Tube
Datasheet: PDF
Stock: 9513
SKU: GT50JR22(STA1,E,S)
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Unit Price: $4.7900

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 50A
Power - Max	230 W
Switching Energy	-
Input Type	Standard
Td (on/off) @ 25°C	-
Test Condition	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-GT50JR22(STA1ES)
Standard Package	25

IGBT 600 V 50 A 230 W Through Hole TO-3P(N)