Toshiba Semiconductor and Storage GT50N322A
PB-F IGBT / TRANSISTOR TO-3PN IC
- Manufacturer: Toshiba Semiconductor and Storage
- Manufacturer's number: Toshiba Semiconductor and Storage GT50N322A
- Package: Tray
- Datasheet: PDF
- Stock: 76
- SKU: GT50N322A
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tray |
| Product Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 156 W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | 800 ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 264-GT50N322A |
| Standard Package | 50 |
IGBT 1000 V 50 A 156 W Through Hole TO-3P(N)
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