Toshiba Semiconductor and Storage RN2106,LXHF(CT
AUTO AEC-Q TR PNP Q1BSR=4.7KOHM,
- Manufacturer: Toshiba Semiconductor and Storage
- Manufacturer's number: Toshiba Semiconductor and Storage RN2106,LXHF(CT
- Package: Tape & Reel (TR)
- Datasheet: PDF
- Stock: 5
- SKU: RN2106,LXHF(CT
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 200 MHz |
| Power - Max | 100 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Supplier Device Package | SSM |
| Base Product Number | RN2106 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 3,000 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
