Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
100mA (Ta) |
Rds On (Max) @ Id, Vgs |
3Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id |
1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
9.3pF @ 3V |
Power - Max |
200mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package |
USV |
Base Product Number |
SSM5N16 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
3,000 |
Mosfet Array 20V 100mA (Ta) 200mW (Ta) Surface Mount USV