Toshiba Semiconductor and Storage SSM6L820R,LXHF

AUTO AEC-Q SS MOS N-CH + P-CH LO

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6L820R,LXHF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 7
SKU: SSM6L820R,LXHF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	30V, 20V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Rds On (Max) @ Id, Vgs	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V, 6.7nC @4.5V
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 15V, 480pF @ 10V
Power - Max	1.4W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	6-TSOP-F
Base Product Number	SSM6L820
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

Mosfet Array 30V, 20V 4A (Ta) 1.4W (Ta) Surface Mount 6-TSOP-F