Toshiba Semiconductor and Storage SSM6N7002KFU,LXH

SMOS 2 IN 1 DUAL NCH HIGH ESD PR

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6N7002KFU,LXH
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8
SKU: SSM6N7002KFU,LXH
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVII-H
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
Power - Max	285mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6
Base Product Number	SSM6N7002
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	264-SSM6N7002KFULXHCT
Standard Package	3,000

Mosfet Array 60V 300mA (Ta) 285mW (Ta) Surface Mount US6