| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
Automotive, AEC-Q101 |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
3.5A (Ta) |
| Rds On (Max) @ Id, Vgs |
112mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs |
3.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
242pF @ 15V |
| Power - Max |
1.5W (Ta) |
| Operating Temperature |
175°C |
| Mounting Type |
Surface Mount |
| Package / Case |
6-SMD, Flat Leads |
| Supplier Device Package |
6-TSOP-F |
| Base Product Number |
SSM6N813 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
3,000 |
Mosfet Array 100V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F