Toshiba Semiconductor and Storage TPC8227-H,LQ

TPC8227-H,LQ

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPC8227-H,LQ
Package: Bulk
Datasheet: PDF
Stock: 6282
SKU: TPC8227-H,LQ
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI-H
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5.1A
Rds On (Max) @ Id, Vgs	33mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Power - Max	1.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	TPC8227
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TPC8227-HLQ
Standard Package	1

Mosfet Array 40V 5.1A 1.5W (Ta) Surface Mount 8-SOP