Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
U-MOSVI-H |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
3.8A |
Rds On (Max) @ Id, Vgs |
57mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id |
2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
640pF @ 10V |
Power - Max |
1.5W (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SOP |
Base Product Number |
TPC8228 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
264-TPC8228-HLQTR |
Standard Package |
2,500 |
Mosfet Array 60V 3.8A 1.5W (Ta) Surface Mount 8-SOP