| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
U-MOSVI-H |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
3.8A |
| Rds On (Max) @ Id, Vgs |
57mOhm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id |
2.3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
640pF @ 10V |
| Power - Max |
1.5W (Ta) |
| Operating Temperature |
150°C |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SOP |
| Base Product Number |
TPC8228 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
264-TPC8228-HLQTR |
| Standard Package |
2,500 |
Mosfet Array 60V 3.8A 1.5W (Ta) Surface Mount 8-SOP