Vishay General Semiconductor - Diodes Division VS-3C10ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Manufacturer: Vishay General Semiconductor - Diodes Division
Manufacturer's number: Vishay General Semiconductor - Diodes Division VS-3C10ET07T-M3
Package: Tube
Datasheet: PDF
Stock: 3
SKU: VS-3C10ET07T-M3
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $4.7400

Ext Price: $4.7400

Details

Parameters
Mfr	Vishay General Semiconductor - Diodes Division
Series	-
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	55 µA @ 650 V
Capacitance @ Vr, F	445pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	-55°C ~ 175°C
Base Product Number	VS-3C10
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	112-VS-3C10ET07T-M3
Standard Package	50

Diode 650 V 10A Through Hole TO-220AC