Vishay General Semiconductor - Diodes Division VS-GT200TS065N

MODULES IGBT - IAP IGBT

Manufacturer: Vishay General Semiconductor - Diodes Division
Manufacturer's number: Vishay General Semiconductor - Diodes Division VS-GT200TS065N
Package: Box
Datasheet: -
Stock: 4070
SKU: VS-GT200TS065N
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Unit Price: $90.8800

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Details

Parameters
Mfr	Vishay General Semiconductor - Diodes Division
Series	FRED Pt®
Package	Box
Product Status	Active
IGBT Type	Trench
Configuration	Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	193 A
Power - Max	517 W
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 200A
Current - Collector Cutoff (Max)	100 µA
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	INT-A-PAK IGBT
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Other Names	112-VS-GT200TS065N
Standard Package	15

IGBT Module Trench Half Bridge Inverter 650 V 193 A 517 W Chassis Mount INT-A-PAK IGBT