Vishay Siliconix SI6562CDQ-T1-BE3

N- AND P-CHANNEL 20-V (D-S) MOSF

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI6562CDQ-T1-BE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: SI6562CDQ-T1-BE3
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Details

Parameters
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs	22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V, 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V, 1200pF @ 10V
Power - Max	1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP
Base Product Number	SI6562
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SI6562CDQ-T1-BE3TR
Standard Package	3,000
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)

Mosfet Array 20V 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc) 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc) Surface Mount 8-TSSOP