Vishay Siliconix SIA938DJT-T1-GE3

DUAL N-CHANNEL 20-V (D-S) MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIA938DJT-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 11
SKU: SIA938DJT-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs	21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	425pF @ 10V
Power - Max	1.9W (Ta), 7.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual
Base Product Number	SIA938
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIA938DJT-T1-GE3TR
Standard Package	3,000

Mosfet Array 20V 4.5A (Ta), 4.5A (Tc) 1.9W (Ta), 7.8W (Tc) Surface Mount PowerPAK® SC-70-6 Dual